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Freescale Semiconductor Technical Data
Document Number: MRF8P20165WH Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz. * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1930 MHz 1960 MHz 1995 MHz Gps (dB) 16.1 16.3 16.3 D (%) 47.0 47.7 46.0 Output PAR (dB) 7.1 7.1 7.0 ACPR (dBc) --27.7 --29.7 --33.3
MRF8P20165WHR3 MRF8P20165WHSR3
1930-1995 MHz, 37 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW Output Power (2 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point 190 Watts (1) Features * Designed for Wide Instantaneous Bandwidth Applications. VBWres 100 MHz. * Designed for Wideband Applications that Require 65 MHz Signal Bandwidth * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. * NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(2)
CASE 465M-01, STYLE 1 NI-780-4 MRF8P20165WHR3
CASE 465H-02, STYLE 1 NI-780S-4 MRF8P20165WHSR3
RFinA/VGSA 3 Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 125 225 Unit Vdc Vdc Vdc C C C (Top View) RFinB/VGSB 4
1 RFoutA/VDSA
2 RFoutB/VDSB
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz Case Temperature 114C, 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz Symbol RJC Value (3) 0.79 0.53 Unit C/W
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 2. Continuous use at maximum temperature will affect MTTF. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P20165WHR3 MRF8P20165WHSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1C (Minimum) B (Minimum) III (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 5 1
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (2) Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 232 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 1.5 Adc)
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.2 2.0 0.05
1.8 2.7 0.2
2.7 3.5 0.3
Vdc Vdc Vdc
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Performance (4) Gps D PAR ACPR 14.2 40.6 5.2 -- 14.8 44.3 5.8 --31.0 17.2 -- -- --28.7 dB % dB dBc
Typical Broadband -- (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1930 MHz 1960 MHz 1995 MHz 1. 2. 3. 4. Side A and Side B are tied together for this measurement. VDDA and VDDB must be tied together and powered by a single DC power supply. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Gps (dB) 16.1 16.3 16.3 D (%) 47.0 47.7 46.0 Output PAR (dB) 7.1 7.1 7.0 ACPR (dBc) --27.7 --29.7 --33.3
(continued)
MRF8P20165WHR3 MRF8P20165WHSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1930--1995 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point (2) IMD Symmetry @ 74 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 65 MHz Bandwidth @ Pout = 37 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) P1dB P3dB IMDsym -- -- -- 104 190 20 -- -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
100 0.2 0.017 0.01
-- -- -- --
MHz dB dB/C dB/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 3
VGGA C8 C10 R2 C1 C3 Z1 C6 C22 C24 C18 C14 CUT OUT AREA C C15 C16 P C12 C30 VDDA C28
R1
C13
C4 C2 R3 C11 C9 VGGB
C7
C19
C25
C29 VDDB C26 C27 MRF8P20165W Rev. 1
C23
Note 1: Component numbers C5, C17, C20 and C21 are not used. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout
Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values
Part C1, C2, C6, C7, C12, C13 C3, C4 C8, C9, C24, C25 C10, C11 C14 C15, C16 C18, C19 C22, C23 C26, C27 C28, C29 C30 R1 R2, R3 Z1 PCB Description 15 pF Chip Capacitors 1.8 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 1.0 pF Chip Capacitors 2.0 pF Chip Capacitors 18 pF Chip Capacitors 0.1 pF Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 , 4 W Chip Resistor 2.37 , 1/4 W Chip Resistors 1750 MHz Band 90, 3 dB Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F150JT250XT ATC600F1R8BT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F0R3BT250XT ATC600F1R0BT250XT ATC600F2R0BT250XT ATC600F180JT250XT ATC600F0R1BT250XT 227CKS050M ATC600F0R8BT250XT CW12010T0050GBK CRCW12062R37FNEA GSC351--HYB1900 RO4350B Manufacturer ATC ATC Murata Kemet ATC ATC ATC ATC ATC Illinois Capacitor ATC ATC Vishay Soshin Rogers
MRF8P20165WHR3 MRF8P20165WHSR3 4 RF Device Data Freescale Semiconductor
VGGA
C7 R1 C21 C19 C10 C9 C1 C11 C C13 C15 C16 R2 C20 C22 C24 C12 C17 C23
C25
VDDA
C5 C3 Z1 R3 C4 C6 C2
C27 C29 C30 C28
P C14 C18
VGGB
C8
C26
VDDB MRF8P20165W Rev. 0
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part C1 C2 C3, C4, C5, C6, C21, C22 C29, C30 C7, C8, C23, C24 C9, C11, C13, C15 C10, C12, C14, C16, C17 C18, C28 C19, C20 C25, C26 C27 R1, R2 R3 Z1 PCB Description 1.6 pF Chip Capacitor 1.8 pF Chip Capacitor 10 pF Chip Capacitors 10 F, 50 V Chip Capacitors 2.7 pF Chip Capacitors 1 pF Chip Capacitors 0.6 pF Chip Capacitors 1.5 pF Chip Capacitors 330 F, 35 V Electrolytic Capacitors 0.5 pF Chip Capacitor 2.37 , 1/4 W Chip Resistors 51 , 1/4 W Chip Resistor 1900 MHz Band 90, 3 dB Hybrid Coupler 0.030, r = 3.48 Part Number ATC600S1R6BT250XT ATC600S1R8BT250XT ATC600S100JT250XT GRM55DR61H106KA88L ATC600S2R7BT250XT ATC600S1R0BT250XT ATC600S0R6BT250XT ATC600S1R5BT250XT MCGPR35V337M10X16--RH ATC600S0R5BT250XT CRCW12062R37FNEA CRCW120651R0FKEA GSC351--HYB1900 RO4350 Manufacturer ATC ATC ATC Murata ATC ATC ATC ATC Multicomp ATC Vishay Vishay Soshin Rogers
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 5
Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 4. Possible Circuit Topologies
MRF8P20165WHR3 MRF8P20165WHSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D 30 MHz Carrier Spacing, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF Gps D, DRAIN EFFICIENCY (%) 20 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 1880 1900 1920 1940 1960 IM3 1980 2000 2020 ACPR 52 50 48 46 44 --27 --29 ACPR (dBc) --31 --33 --35 --37 2040
--2.5 --2.75 PARC (dB) --3 --3.25 --3.5 --3.75
--21 --22 --23 --24 --25 --26
PARC
f, FREQUENCY (MHz)
Figure 5. 2-Carrier Output Peak- -Average Ratio Compression -to(PARC) Broadband Performance @ Pout = 37 Watts Avg.
20 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF ACPR VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps D 52 50 48 46 44 --26 --28 ACPR (dBc) --30 --32 --34 1980 2000 2020 --36 2040
D, DRAIN EFFICIENCY (%)
--2.5 --2.75 --3 --3.25 --3.5 --3.75 PARC (dB)
10 1880
1900
1920
1940
1960
f, FREQUENCY (MHz)
Figure 6. Single-Carrier Output Peak- -Average Ratio Compression -to(PARC) Broadband Performance @ Pout = 37 Watts Avg.
--10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 74 W (PEP), IDQA = 550 mA, VGSB = 1.3 Vdc Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 1960 MHz IM3--L --30 --40 --50 --60 IM5--L IM5--U IM7--L IM7--U IM3--U
1
10 TWO--TONE SPACING (MHz)
100
200
Figure 7. Intermodulation Distortion Products versus Two-Tone Spacing
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 7
IM3, THIRD ORDER INTERMODULATION (dBc)
TYPICAL CHARACTERISTICS
17.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 1 0 --1 --2 --3 --4 --5 Gps --1 dB = 17 W --2 dB = 28 W --3 dB = 39 W VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc f = 1960 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 60 D, DRAIN EFFICIENCY (%) 50 D 40 ACPR 30 20 PARC 10 0 60 --10 --15 --20 --25 --30 --35 --40 ACPR (dBc) 1975 ACPR (dBc) 2010
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 40 50
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
18 17 Gps, POWER GAIN (dB) 16 VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps D 60 1930 MHz 50 1960 MHz 1995 MHz 40 ACPR 1930 MHz 1960 MHz 30 20 10 0 200 0 --10 D, DRAIN EFFICIENCY (%) --20 --30 --40 --50 --60
1930 MHz 15 1960 MHz 1995 MHz 14 13 12 1
1995 MHz
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100
Figure 9. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 1 IM7--L IM7--U 10 Pout, OUTPUT POWER (WATTS) AVG. IM3--U IM3--L Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 100 --10 --20 IM3, IM5, IM7 (dBc) --30 IM5--L IM5--U --40 --50 --60 --70 200 18 15 12 GAIN (dB) 9 6 3 0 1800 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.3 Vdc
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, f1 = 1945 MHz f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps
1835
1870
1905
1940
2045
2080
f, FREQUENCY (MHz)
Figure 10. 2-Carrier W-CDMA Power Gain, IM3, IM5, IM7 versus Output Power
Figure 11. Broadband Frequency Response
MRF8P20165WHR3 MRF8P20165WHSR3 8 RF Device Data Freescale Semiconductor
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) Input Signal 0.1 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) --20 --30 --40 --50 --60 --70 --80 --90 --100 --110 --120 --75 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --60 --45 --30 --15 0 15 30
3.84 MHz Channel BW
+IM3 in 3.84 MHz BW 45 60 75
f, FREQUENCY (MHz)
Figure 12. CCDF W-CDMA IQ Magnitude Clipping, 2-Carrier Test Signal
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9
Figure 13. 2-Carrier W-CDMA Spectrum
3.84 MHz Channel BW
--ACPR in 3.84 MHz Integrated BW
+ACPR in 3.84 MHz Integrated BW
Figure 14. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single-Carrier W-CDMA Spectrum
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 9
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power f (MHz) 1930 1960 1990 Zsource () 16.0 -- j8.99 17.2 -- j2.43 18.6 + j3.55 Zload (1) () 1.58 -- j5.68 1.55 -- j6.08 1.93 -- j5.82 P1dB (dBm) 50.4 50.4 50.4 (W) 110 110 110 D (%) 55.3 54.4 54.4 (dBm) 51.2 51.3 51.2 P3dB (W) 132 135 132 D (%) 55.8 53.5 55.4
(1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Figure 16. Carrier Side Load Pull Performance -- Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) 1930 1960 1990 Zsource () 16.0-- j8.99 17.2 -- j2.43 18.6 + j3.55 Zload (1) () 3.45 -- j3.43 3.68 -- j3.88 2.95-- j3.99 P1dB (dBm) 48.5 48.7 48.2 (W) 71 74 66 D (%) 65.8 65.6 65.1 (dBm) 49.6 49.6 49.6 P3dB (W) 91 91 91 D (%) 66.5 66.1 65.3
(1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Figure 17. Carrier Side Load Pull Performance -- Maximum Efficiency Tuning
MRF8P20165WHR3 MRF8P20165WHSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 11
MRF8P20165WHR3 MRF8P20165WHSR3 12 RF Device Data Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 13
MRF8P20165WHR3 MRF8P20165WHSR3 14 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P20165WH and MRF8P20165WHS parts will be available for 2 years after release of MRF8P20165WH and MRF8P20165WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P20165WH and MRF8P20165WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Apr. 2011 * Initial Release of Data Sheet Description
MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 15
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MRF8P20165WHR3 MRF8P20165WHSR3
Rev. 16 0, 4/2011 Document Number: MRF8P20165WH
RF Device Data Freescale Semiconductor

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